vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 1 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description vbpw34s and vbpw34sr are high speed and high sensitive pin photodiodes. it is a surface mount device (smd) including the chip with a 7.5 mm 2 sensitive area detecting visible and near infrared radiation. features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 6.4 x 3.9 x 1.2 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high speed photo detector note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21733 vbp w 34s vbp w 34sr product summary component i ra (a) ? (deg) 0.1 (nm) v bpw34s 55 65 430 to 1100 v bpw34sr 55 65 430 to 1100 ordering information ordering code packaging remarks package form v bpw34s tape and reel moq: 1000 pc s, 1000 pcs/reel gullwing v bpw34sr tape and reel moq: 1000 pcs, 1000 pcs/reel re verse gullwing absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient r thja 350 k/w
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 2 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 50 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 45 55 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5v = 950 nm 100 80 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 3 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 i ra - re v erse light c u rrent (a) e e - irradiance (m w /cm 2 ) 10 12787 v r = 5 v = 950 nm 0.1 1 10 1 10 100 v r - re v erse voltage (v) 100 12788 i ra - re v erse light c u rrent (a) 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm 0 20 40 60 80 948407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse voltage (v) 0.1 100 110 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8420 - w a v elength (nm) s( ) rel - relati v e spectral sensiti v it y 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8406 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - ang u lar displacement
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 4 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions for vbpw34s in millimeters drawing-no.: 6.541-5086.01-4 i ss ue: 1; 15.04.10 22105 8.9 5.4 1.8 recommended s older pad s pecification s according to din technical drawing s anode cathode 2.2 0.18 0.2 4.4 0.1 1.95 3.9 0.1 1 0.15 6.4 0.3 0.8 0.1 1.6 0.1 chip s ize 3 x 3 1.2 0.1 0.1 -0.1 (0.47 ref.) flat area 0.3 min. 0.75 0.05 0.15 0.02
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 5 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions for vbpw34sr in millimeters drawing-no.: 6.541-5085.01-4 i ss ue: 1; 15.04.10 8.9 5.4 1.8 recommended s older pad s pecification s according to din technical drawing s anode cathode 2.2 0.18 0.2 4.4 0.1 1.95 3.9 0.1 1 0.3 6.4 0.3 0.8 0.1 1.6 0.1 chip s ize 3 x 3 0.1 min. (0.47 ref.) flat area 0.3 min 0.75 0.05 0.15 0.02 1.2 0.1 22104
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 6 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping dimensions for vbpw34s in millimeters taping dimensions for vbpw34sr in millimeters 21730 21731
vbpw34s, vbpw34sr www.vishay.com vishay semiconductors rev. 1.2, 24-aug-11 7 document number: 81128 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reel dimensions for vbpw34s and vbpw34sr in millimeters solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and re moving from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 3 floor life: 168 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 21732 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19841 255 c
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